vs-st330spbf series www.vishay.com vishay semiconductors revision: 08-jul-14 1 document number: 94409 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 phase control thyristors (stud version), 330 a features ? center amplifying gate ? international standard case to-209ae (to-118) ? hermetic metal case wi th ceramic insulator ? compression bonded encapsulation for heavy duty operations such as severe thermal cycling ? designed and qualified for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 330 a v drm /v rrm 400 v, 2000 v v tm 1.52 v i gt 200 ma t j -40 c to 125 c package to-209ae (to-118) diode variation single scr to- 209ae (to-118) major ratings and characteristics parameter test conditions values units i t(av) 330 a t c 75 c i t(rms) 520 a i tsm 50 hz 9000 60 hz 9420 i 2 t 50 hz 405 ka 2 s 60 hz 370 v drm /v rrm 400 to 2000 v t q typical 100 s t j -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma vs-st330s 04 400 500 50 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100
vs-st330spbf series www.vishay.com vishay semiconductors revision: 08-jul-14 2 document number: 94409 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 conduction, half sine wave 330 a 75 c maximum rms on-state current i t(rms) dc at 75 c case temperature 520 a maximum peak, one-cycle ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, ? initial t j = t j maximum 9000 t = 8.3 ms 9420 t = 10 ms 100 % v rrm reapplied 7570 t = 8.3 ms 7920 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 405 ka 2 s t = 8.3 ms 370 t = 10 ms 100 % v rrm reapplied 287 t = 8.3 ms 262 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 4050 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.834 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 0.898 low level value of on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.687 m ? high level value of on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.636 maximum on-state voltage v tm i pk = 1000 a, t j = t j maximum, t p = 10 ms sine pulse 1.52 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum non-repetitive rate of rise ? of turned-on current di/dt gate drive 20 v, 20 ? , t r ? 1 s ? t j = t j maximum, anode voltage ? 80 % v drm 1000 a/s typical delay time t d gate current a, di g /dt = 1 a/s ? v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 550 a, t j = t j maximum, di/dt = 40 a/s, ? v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 ? , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of ? off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and ? off-state leakage current i rrm, i drm t j = t j maximum, rated v drm /v rrm applied 50 ma
vs-st330spbf series www.vishay.com vishay semiconductors revision: 08-jul-14 3 document number: 94409 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positive gate current i gm t j = t j maximum, t p ? 5 ms 3.0 a maximum peak positive gate voltage +v gm t j = t j maximum, t p ? 5 ms 20 v maximum peak negative gate voltage -v gm 5.0 dc gate current required to trigger i gt t j = -40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 200 - ma t j = 25 c 100 200 t j = 125 c 50 - dc gate voltage required to trigger v gt t j = -40 c 2.5 - v t j = 25 c 1.8 3 t j = 125 c 1.1 - dc gate current not to trigger i gd t j = t j maximum maximum gate cu rrent/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j -40 to 125 c maximum storage temperature range t stg -40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.10 k/w maximum thermal resist ance, case to heatsink r thc-hs mounting surface, smooth, flat and greased 0.03 mounting torque, 10 % non-lubricated threads 48.5 (425) n m (lbf in) approximate weight 535 g case style see dimension - link at the end of datasheet to-209ae (to-118) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.011 0.008 t j = t j maximum k/w 120 0.013 0.014 90 0.017 0.018 60 0.025 0.026 30 0.041 0.042
vs-st330spbf series www.vishay.com vishay semiconductors revision: 08-jul-14 4 document number: 94409 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduction angle st3 3 0 s se r i e s r (dc) = 0.10 k/ w thjc 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period st3 3 0 s se r i e s r (dc) = 0.10 k/ w thjc 25 50 75 100 125 maximum allowable ambient temperature (c) 0 . 0 8 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 1 . 2 k / w r = 0 . 0 3 k / w - d e l t a r t h s a 0 . 1 2 k / w 0 40 80 120 160 200 240 280 320 360 400 440 480 0 50 100 150 200 250 300 350 180 120 90 60 30 rm s li m it conduction angle maximum average on-state power loss (w) average on-state current (a) st3 3 0 s se r i e s t = 1 2 5 c j 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0.0 3 k/ w - de lta r t hs a 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 100 200 300 400 500 600 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) st3 3 0 s se r i e s t = 125c j
vs-st330spbf series www.vishay.com vishay semiconductors revision: 08-jul-14 5 document number: 94409 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 110100 number of equa l amp litud e ha lf cyc le current pulses (n) pe ak half sine wave on-sta te current (a) initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st3 3 0 s se r i e s at any rated load condition and with rated v applied following surge. rrm 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control pe a k ha lf sin e wa v e o n -st a t e c u rre n t ( a ) initia l t = 125c no voltage reapplied rated v reapplied rrm j st330s series maximum non repetitive surge current of conduction may not be maintained. instantaneous on-state voltage (v) instantaneous on-state current (a) 100 1000 10000 0 1 2 3 4 5 6 7 tj = 25 c tj = 125 c st330s series 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 sq u a r e w a v e p u l se d u r a t i o n ( s ) thjc st3 3 0 s se r i e s st e a d y st a t e v a l u e r = 0.10 k/ w (dc operation) thjc transient thermal impedance z (k/w)
vs-st330spbf series www.vishay.com vishay semiconductors revision: 08-jul-14 6 document number: 94409 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj = 2 5 c tj = 1 2 5 c tj = - 4 0 c (2) (3) in st a n t a n e o u s g a t e c u r re n t ( a ) inst a nt a ne o us g a t e vo lt a g e (v) rectangular gate pulse a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms frequency limited by pg(av) rated di/ dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, t p = 0.66m s d e v i c e : st3 3 0 s se r i e s (4) - thyristor 2 - essential part number 3 - 0 = converter grade 4 - s = compression bonding stud 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4"-16unf-2a threads 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) 9 8 device code 5 1 3 2 4 6 7 8 9 st vs- 33 0 s 16 p 0 pbf 1 - vishay semiconductors product - none = standard production - pbf = lead (pb)-free links to related documents dimensions www.vishay.com/doc?95080
document number: 95080 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 02-aug-07 1 to-209ae (to-118) outline dimensions vishay semiconductors dimensions in millimeters (inches) note (1) for metric device: m24 x 1.5 - length 21 (0.83) maximum red cathode red silicon rubber 10.5 (0.41) nom. 245 (9.65) 10 (0.39) white gate 4.3 (0.17) dia. ceramic housing white shrink 47 (1.85) max. 245 (9.65) 255 (10.04) 38 (1.50) max. dia. 22 (0.87) max. 21 (0.82) max. sw 45 flexible leads 4.5 (0.18) max. c.s. 50 mm 2 (0.078 s.i.) red shrink 49 (1.92) max. 3/4"16 unf-2a (1) 27.5 (1.08) max. fast-on terminals amp. 280000-1 ref-250 9.5 (0.37) min. 22 (0.86) min.
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